Semiconductor Memory Devices | Semiconductor Memory Device Analysis

Characterization of semiconductor memory devices

Semiconductor memory development is increasingly complex as a result of various factors, including shrinking interconnect sizes, high-aspect-ratio storage cells, and the utilization of new materials. These factors introduce new challenges to metrology, defect analysis, and failure analysis applications.

Our innovative workﬂow solutions are speciﬁcally designed to address these challenges by enabling the precise measurement of critical dimensions (CD) and facilitating root cause analysis of buried defects within the 3D structure of memory devices. This comprehensive approach allows for a complete statistical analysis of critical process performance metrics, crucial for optimizing and controlling the manufacturing process.

Our unique failure analysis workﬂow includes fault localization, sample preparation, imaging and analysis. These unique methods play a crucial role in identifying defects, improving device reliability, and optimizing performance.

Semiconductor memory device analysis applications

Explore how our wafer-level and die-level workﬂows enable development engineers to gain access to critical dimension data and accelerate root cause analysis of defects.

Wafer-level workﬂows

Package/die-level workﬂows

Semiconductor memory device analysis techniques

Explore the innovative techniques that Thermo Scientific instruments utilize in the characterization of memory devices.

Memory device sample preparation

Memory device fault isolation

Imaging and analysis

Electrostatic discharge testing

For Research Use Only. Not for use in diagnostic procedures.