Semiconductor Memory Device Analysis Tools

Measurement and failure analysis of semiconductor memory devices

We recognize the significance of accurate measurements, defect identification, and failure analysis in guaranteeing the effectiveness and dependability of these state-of-the-art technologies. Leveraging our expertise and advanced tools, we provide customized solutions to address the distinct challenges encountered by advanced memory manufacturers.

 

Whether you require assistance in streamlining analytical processes or resolving technical obstacles, our team is fully committed to providing comprehensive support. We encourage you to explore our range of solutions and allow us to contribute to the advancement and excellence of your manufacturing endeavors.

Semiconductor memory device metrology tools

For metrology applications, we provide product solutions including SEM imaging and analysis, SEM metrology, TEM sample preparation, TEM imaging and analysis, and TEM metrology. Learn more about our metrology workflow solutions for 3D NAND and DRAM memory device fabrication.

Helios 5 PXL Wafer DualBeam

The Thermo Scientific Helios 5 PXL Wafer DualBeam is a plasma focused ion beam scanning electron microscope (PFIB-SEM) that features high-performance, in-line metrology, wafer-level delayering, and process monitoring to quickly provide critical insights for process development and manufacturing engineers.

Verios 5 XHR SEM

The Thermo Scientific Verios XHR SEM is an innovative instrument that provides automated high-resolution SEM imaging specifically designed for memory metrology and analysis on wafer die pieces.

Helios 5 EXL Wafer DualBeam

The Thermo Scientific Helios 5 EXL DualBeam is a 300 mm full-wafer FIB-SEM designed to address TEM sample preparation challenges in the semiconductor industry. The Helios 5 EXL DualBeam can prepare samples of today’s most advanced DRAM and 3D NAND technology.

Helios 6 HD FIB-SEM

The Thermo Scientific Helios 6 HD Focused Ion Beam Scanning Electron Microscope (FIB-SEM) is designed to meet the industry need for higher volumes of high-quality TEM data for defect analysis and metrology on die-level samples. Producing higher quality TEM data provides actionable information to maximize manufacturing yields.

Metrios 6 (S)TEM

The Thermo Scientific Metrios 6 Scanning Transmission Electron Microscope is specifically designed for semiconductor critical dimension (CD) reference metrology and characterization. This data can enable you to accelerate yield ramp with exceptional productivity.

Semiconductor memory device defect analysis tools

We specialize in offering comprehensive product solutions aimed at addressing the challenges associated with memory device defect analysis. Our range of services includes SEM imaging and analysis, TEM sample preparation, as well as TEM imaging and analysis. By leveraging our defect analysis workflow solutions, you can gain valuable insights into the root causes of buried defects in high-aspect-ratio memory structures. We invite you to explore our unique advantages and learn more about how our expertise can assist with your defect analysis needs.

Helios 5 EXL Wafer DualBeam

The Thermo Scientific Helios 5 EXL Wafer DualBeam offers wafer-level defect root cause analysis workflows. The deep mill workflow is specifically designed for automated cross-section analysis on tall structures such as 3D NAND. For TEM prep, the 1-click piece extraction workflow is suitable for smaller defects found in DRAM or 3D NAND devices

Helios 6 HD FIB-SEM

The Thermo Scientific Helios 6 HD Focused Ion Beam Scanning Electron Microscope (FIB-SEM) is designed to meet the industry need for higher volumes of high-quality TEM data for defect analysis and metrology on die-level samples. Producing higher quality TEM data provides actionable information to maximize manufacturing yields.

Talos F200E TEM

The Thermo Scientific Talos F200E TEM provides high-resolution S/TEM and TEM imaging with minimal distortion, combined with high-throughput energy-dispersive X-ray spectroscopy (EDS) functionality, tailored for a wide range of semiconductor defect analysis and research applications.

Spectra Ultra (S)TEM

The Thermo Scientific Spectra Ultra Scanning Transmission Electron Microscope introduces innovative capabilities designed to overcome structural and material challenges. The Thermo Scientific Ultra-X Detector shortens elemental mapping time and makes it possible to analyze beam-sensitive structures.

Semiconductor memory device failure analysis tools

We have extensive expertise in delivering trusted failure analysis solutions for advanced memory device development and manufacturing, including fault localization, sample preparation, and imaging and analysis. Learn more about our failure analysis workflow solutions and discover our exceptional solutions for electrical failure analysis and physical failure analysis on 3D NAND and DRAM devices.

ELITE System

The Thermo Scientific ELITE System utilizes lock-in IR thermography (LIT) to accurately and efficiently locate variations in the local power dissipation that lead to local temperature increases and to provide non-destructive 3D device insights.

Meridian S System

The Thermo Scientific Meridian S System provides high-resolution and high-sensitivity static OFI analysis for electrical fault localization using photon emission and laser scanning microscopy on devices stimulated by static bias via probe card or micro-probes.

Meridian WS-DP System

The Thermo Scientific Meridian WaferScan System is able to perform full wafer backside photon emission and laser scanning microscopy analysis on IC devices stimulated by static bias or dynamic ATE test conditions.

nProber IV System

The Thermo Scientific nProber IV System is a high-performance SEM-based platform for the localization of transistor and metallization faults. It is the first to use the high-resolution LEEN2 SEM Column specifically designed to increase speed, accuracy, and output at a critical path in the FA workflow, where productivity is paramount.

Hyperion II System

The Thermo Scientific Hyperion II System is an atomic force prober (AFP) based nanoprobing platform that employs multiple scanning probe tips to image and electrically contact the device under test for fault localization and electrical characterization in support of semiconductor technology development and yield improvement.

Helios 5 PFIB DualBeam

The Thermo Scientific Helios 5 Plasma FIB (PFIB) DualBeam delivers high-throughput, planar/uniform, large-area delayering, sample preparation, and large-area physical failure analysis for package- and die-level failure analysis.

Helios 5 Hydra DualBeam

The Thermo Scientific Helios 5 Hydra DualBeam features four switchable plasma ion sources (Ar+, Xe+, O+, N+) to perform the most challenging FA work, including large-volume SEM cross-sections, device delayering for nanoprobing, as well as precision, Ga-free TEM sample preparation.

Helios 6 HD FIB-SEM

The Thermo Scientific Helios 6 HD Focused Ion Beam Scanning Electron Microscope (FIB-SEM) is designed to meet the industry need for higher volumes of high-quality TEM data for defect analysis and metrology on die-level samples. Producing higher quality TEM data provides actionable information to maximize manufacturing yields.

Talos F200E TEM

The Thermo Scientific Talos F200E TEM provides high-resolution S/TEM and TEM imaging with minimal distortion, combined with high-throughput energy-dispersive X-ray spectroscopy (EDS) functionality, tailored for a wide range of semiconductor defect analysis and research applications.

Spectra Ultra (S)TEM

The Thermo Scientific Spectra Ultra Scanning Transmission Electron Microscope introduces innovative capabilities designed to overcome structural and material challenges. The Thermo Scientific Ultra-X Detector shortens elemental mapping time and makes it possible to analyze beam-sensitive structures.

For Research Use Only. Not for use in diagnostic procedures.